IMP Process GasCabinet
Ion Implantation (IMP) enables the optimization of material surface properties and the acquisition of novel characteristics through precise control of parameters such as ion energy, implantation dose, and temperature, thereby facilitating advancements in fields such as semiconductors, materials science, and biomedicine. The Ion Implantation Process Gas Delivery Control Cabinet is a critical component of ion implantation equipment, responsible for precisely controlling gas flow rate and pressure to meet the stringent gas supply requirements of the ion implantation process. This control cabinet integrates high precision flow control, pressure regulation, and safety protection functions, ensuring the stability and safety of the ion implantation process.
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Product Features
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产品参数
Product Features
High precision flow control:
流量控制器和压力调节器采用高精度设计，能够确保气体流量和压力的精确控制
通过对气路部分设计满足客户对小流量、低压力的气体流量控制，最终满足客户的工艺要求
安全稳定性
气柜配有门互锁开关、压力安全开关、单向阀、手动进切断阀等安全部件保证气柜安全
设备采用全304不锈钢，外观30mm以上圆弧过渡设计保证良好导电性，提高了设备的安全性能。
高气密性
产品采用IGS和VCR接口形式
实现半导体设备的高气密性
模块化
采用模块化设计，设备结构紧凑、模块化设计
便于维护和更换部件。nm以上的颗粒杂质
安全认证
通过SEMI S6测试安全认证
产品参数
| 外漏测试漏率 | ≤1.0X10-11/mbar·L/s |
| 内漏测试漏率 | ≤1.0X10-9/mbar·L/s |
| 保压测试50psi | 氮气保压测试，保压12h，压降 ≤1% |
| 氦爆测试漏率 | ≤1.0X10-9/mbar·L/s;（可选） |
| 颗粒测试 | (5 particle @ >0.1um) |
| 水氧测试 | 水含量≤10PPB，氧含量≤10PPB；（可选） |
